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STD8NM50N, STF8NM50N STP8NM50N, STU8NM50N N-channel 500 V, 0.73 , 5 A MDmeshTMII Power MOSFET in DPAK, IPAK, TO-220 and TO-220FP Features Order codes VDSS@TJMAX RDS(on)max. ID 3 1 3 2 STD8NM50N 1 STF8NM50N DPAK IPAK 550 V < 0.79 5A STP8NM50N STU8NM50N 100% avalanche tested Low input capacitances and gate charge 3 2 3 1 2 Low gate input resistance 1 TO-220FP TO-220 Application Switching applications Figure 1. Internal schematic diagram Description These devices are 500 V N-channel Power MOSFETs made using the second generation of MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Order codes Marking Packages Packaging STD8NM50N DPAK Tape and reel STF8NM50N TO-220FP 8NM50N STP8NM50N TO-220 Tube STU8NM50N IPAK February 2011 Doc ID 17413 Rev 3 1/21 www.st.com 21 Contents STD8NM50N, STF8NM50N, STP8NM50N, STU8NM50N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical charac